jun 2018 . version 1 . 1 magnachip semiconductor ltd . 1 ` absolute maximum ratings (ta = 25 o c) characteristics symbol mdp 12 n 5 0 mdf 12 n 50 unit drain - source voltage v dss 5 00 v gate - source voltage v gss 30 v continuous drain current t c =25 o c i d .11.5 11.5 * a t c = 10 0 o c 7.0 7.0 * a pulsed drain current (1) i dm 46 46 * a power dissipation t c =25 o c p d 165 42 w w/ o c derate above 25 o c 1.33 0.32 repetitive avalanche energy (1) e ar 16.5 mj peak diode recovery dv/dt (3) d v/dt 4.5 v/ns single pulse avalanche energy (4) e as 460 mj junction and storage temper ature range t j , t stg - 55~150 o c * id limited by maximum junction temperature thermal characteristics characteristics symbol mdp 12 n 50 mdf 12 n 5 0 unit thermal resistance, junction - to - ambient (1) r ja 62.5 62.5 o c/w thermal resistance, junction - to - case (1) r jc 0.75 3.0 md p 12 n 5 0 f /mdf 12 n 5 0 f n - channel mosfet 5 00 v, 11.5 a, 0.7 5 ? general description the se n - channel mosfet are produced using advanced magna ch ips mosfet technology, which provides low on features ? ds = 5 00 v ? d = 11.5 a @ v gs = 10v ? ds(on) gs = 10v applications ? ? ? to - 220f mdf series to - 220 mdp series d g s
jun 2018 . version 1 . 1 magnachip semiconductor ltd . 2 ordering information p art number temp. range package packing rohs status md p 12 n 5 0 f th - 55~150 o c to - 220 tube halogen free md f 12 n 5 0 f th - 55~150 o c to - 220 f tube halogen free electrical characteristics (ta =25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 5 00 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250a 2.5 - 4.5 drain cut - off current i dss v ds = 5 00 v, v gs = 0v - - 1 0 a gate leakage current i gss v gs = 30 v, v ds = 0v - - 1 00 n a drain - source on resistance r ds(on) v gs = 10v, i d = 5.75 a 0.59 0.7 5 forward transconductance g fs v ds = 30 v, i d = 5 .75 a - 5 - s dynamic characteristics total gate charge q g v ds = 4 0 0v, i d = 11.5 a, v gs = 10v (3) - 20 26 nc gate - source charge q gs - 7.0 - gate - drain charge q gd - 7.5 - input capacitance c iss v ds = 25v, v gs = 0v, f = 1.0mhz - 1010 1300 pf reverse transfer capacitance c rss - 2.7 4.0 output capacitance c oss - 125 165 turn - on delay time t d(on) v gs = 10v, v ds = 25 0 v, i d = 11.5 a, r g = 25 (3) - 47 100 ns rise time t r - 35 80 turn - off delay time t d(off) - 55 120 fall time t f - 28 60 drain - source body diode characteristics maximum continuous drain to source diode forward current i s - 11.5 - a source - drain diode forwa rd voltage v sd i s = 11.5 a , v gs = 0v - 1. 4 v body diode reverse recovery time t rr i f = 11.5 a , dl/dt = 100a/s (3) - 100 ns body diode reverse recovery charge q rr - 2.61 c note : 1. p ulse width is based on r j c & r j a and the maximum allowed junction temperature of 150c. 2 . pulse test: pulse width 300us, duty cycle 2%, pulse width limited by junction temperature t j(max) =150 c. 3. i s d 11.5 a , di/dt 200a/us, v dd =50v, r g =25 , starting t j =25 c 4. l= 6.3 mh, i as = 11.5 a , v dd =50v, r g =25 , starting t j =25 c ,
jun 2018 . version 1 . 1 magnachip semiconductor ltd . 3 fig. 5 transfer characteristics fig.1 on - region characteristics fig. 2 on - resistance variation with drain current and gate voltage fig. 3 on - resistance variation with temperature fig. 4 breakdown voltage variation vs. temperature fig. 6 body diode forward voltage variation with source current and temperature 5 10 15 20 1 2 3 4 5 6 7 8 9 10 11 12 notes 1. 250 ? 2. t c =25 v gs =5.5v =6.0v =6.5v =7.0v =8.0v =10.0v =15.0v i d ,drain current [a] v ds ,drain-source voltage [v] -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 ? bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 0 5 10 15 20 0.6 0.8 1.0 1.2 v gs =10.0v v gs =20v r ds(on) [? ] i d ,drain current [a] 2 4 6 8 10 1 10 -55 25 150 * notes ; 1. vds=30v i d (a) v gs [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 25 150 notes : 1. v gs = 0 v 2.250 ? s pulse test i dr reverse drain current [a] v sd , source-drain voltage [v] -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 5.75a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
jun 2018 . version 1 . 1 magnachip semiconductor ltd . 4 fig. 7 gate charge characteristics fig. 8 capacitance characteristics fig. 9 maximum safe operating area mdp 12n5 0 f (to - 220) fig. 11 transient thermal response curve mdp 12 n 5 0 f (to - 220) fig. 1 2 transient thermal response curve mdf 12 n 5 0 f (to - 220f) fig. 10 maximum safe operating area mdf12n5 0 f (to - 220f) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c r jc =0.75 /w single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec] 0 5 10 15 20 25 0 2 4 6 8 10 100v 250v 400v note : i d = 11.5a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 1s 10 ? s 100 ? s 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c r jc =3.0 /w single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec] 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 ? s 100 ? s 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 1 10 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v]
jun 2018 . version 1 . 1 magnachip semiconductor ltd . 5 fig. 15 maximum drain current v s. cas e temperature fig .1 3 single pulse maximum power dissipation mdp 12 n 5 0 f (to - 220) fig .1 4 single pulse maximum power dissipation mdf 12 n 5 0 f (to - 220f) 1e-5 1e-4 1e-3 0.01 0.1 1 10 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 single pulse r thjc = 0.75 t c = 25 power (w) pulse width (s) 25 50 75 100 125 150 0 2 4 6 8 10 12 i d , drain current [a] t c , case temperature [ ] 1e-5 1e-4 1e-3 0.01 0.1 1 10 0 2000 4000 6000 8000 10000 12000 single pulse r thjc = 3.0 t c = 25 power (w) pulse width (s)
jun 2018 . version 1 . 1 magnachip semiconductor ltd . 6 ? physical dimension 3 leads , to - 220 dimensions are in millimeters unless otherwise specified
jun 2018 . version 1 . 1 magnachip semiconductor ltd . 7 ? physical dimension 3 leads , to - 220f dimensions are in millimeters unless otherwise specified symbol min nom max a 4.50 4.93 b 0.63 0.91 b1 1.15 1.47 c 0.33 0.63 d 15.47 16.13 e 9.60 10.71 e 2.54 f 2.34 2.84 g 6.48 6.90 l 12.24 13.72 l1 2.79 3.67 q 2.52 2.96 q1 3.10 3.50 r 3.00 3.55
jun 2018 . version 1 . 1 magnachip semiconductor ltd . 8 discl aimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry with out notice at any time. magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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